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Browse Prior Art Database

Self-Aligned Silicon Nitride-Polyimide Double Step Via Hole

IP.com Disclosure Number: IPCOM000044428D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-05

Publishing Venue

IBM

Related People

Authors:
Alcorn, C Lechaton, J Stanasolovich, D [+details]

Abstract

Composite dielectric layers have been used as passivation layers for integrated circuits in the prior art [*]. The typical composite dielectric layers include a lower layer of silicon nitride on top of which is deposited a layer of polyimide. A problem arises when such composite dielectric layers serve as the insulator layer separating a first metal interconnection layer from a second metal interconnection layer. Where a via hole is to be formed in the composite dielectric layer between the first metal layer and the second metal layer, the relative thickness of the insulator layer creates a substantially large vertical step over which the second metal layer must traverse in order to make electrical contact with the first metal layer.