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Diagnostic Test for Defective Schottky Barrier Diodes

IP.com Disclosure Number: IPCOM000044546D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-06

Publishing Venue

IBM

Related People

Authors:
Carlson, WH Carnell, CH Igoe, JT Scrivner, CH [+details]

Abstract

This article describes a rapid method of determining the cause of low forward voltages in Schottky barrier diodes. The method uses standard electrical test equipment and can determine whether the condition is due to structural defects or positively changed ionic contaminants. The structure of a typical Schottky barrier diode (SBD) and defects thereof are shown in the figure. During manufacture, several conditions can occur which cause the SBD to exhibit forward voltages lower than normally observed. For example, structural defects such as missing platinum silicide (PtSi) 1 or chromium (Cr) extending beyond the PtSi 2 produce a small area chromium-silicon (Cr/Si) diode in parallel with the desired PtSi/Si diode.