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High Temperature Polyimide-Based Lift-Off Process

IP.com Disclosure Number: IPCOM000044625D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-06

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Related People

Acosta, RE Iyer, SS Ting, CY [+details]


This article relates generally to the processing of integrated circuits and more specifically to a high-temperature lift-off process which permits the deposition for lift-off to be done at temperatures of up to 450ŒC and also provides the capability of using refractory metals in the lift-off process. Lift-off is an additive method of pattern definition which is widely used for line definition. Its use is limited in that the maximum temperature at which a deposition may be done is limited to the maximum temperature that the resist can stand. This limitation precludes its use in situations where refractory metals, such as titanium, have to be evaporated.