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X-Ray Spectroscopy at a Buried Diode Interface

IP.com Disclosure Number: IPCOM000044642D
Original Publication Date: 1984-Dec-01
Included in the Prior Art Database: 2005-Feb-06

Publishing Venue

IBM

Related People

Authors:
Boehme, RF Cargill, GS Weber, W [+details]

Abstract

X-ray absorption spectroscopy is used for both qualitative and quantitative analysis of the chemical composition of a material, and also for the analysis of the atomic structure of the material. Each element has X-ray absorption edges that are characteristic of that element. These techniques generally use detection of X-ray intensity transmitted through the material, detection of secondary X-ray fluorescence, detection of secondary auger electrons, or detection of total electron yield. A technique is described which permits sampling the X-ray absorption spectra, and therefore the properties of a material, in the region of a diode junction.