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Multi Value Resistor for Gate Arrays

IP.com Disclosure Number: IPCOM000044815D
Original Publication Date: 1984-Oct-01
Included in the Prior Art Database: 2005-Feb-06

Publishing Venue

IBM

Related People

Authors:
Culican, EF Peterson, CI [+details]

Abstract

Gate array design flexibility is highly desirable. In many instances the user requires the option of at least two power levels. This may be accomplished through contact personality. Resistors are commonly defined by a combination of base diffusion and ion implant sections allowing for a wide range of resistor values within the physical restriction of the cell size.