Browse Prior Art Database

Recessed Source and Drain Gallium Arsenide MESFET Disclosure Number: IPCOM000044897D
Original Publication Date: 1983-Jan-01
Included in the Prior Art Database: 2005-Feb-06

Publishing Venue


Related People

Andrade, TL [+details]


A recessed source and drain structure for a gallium arsenide MESFET device is disclosed which results in a self-aligned gate structure without the requirement for tight photolithographic tolerances.