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Recessed Source and Drain Gallium Arsenide MESFET

IP.com Disclosure Number: IPCOM000044897D
Original Publication Date: 1983-Jan-01
Included in the Prior Art Database: 2005-Feb-06

Publishing Venue

IBM

Related People

Authors:
Andrade, TL [+details]

Abstract

A recessed source and drain structure for a gallium arsenide MESFET device is disclosed which results in a self-aligned gate structure without the requirement for tight photolithographic tolerances.