Browse Prior Art Database

Compensation Method for Fabricating Dual Polarity Polycrystalline Silicon Gates for CMOS Integrated Circuits

IP.com Disclosure Number: IPCOM000044955D
Original Publication Date: 1983-Jan-01
Included in the Prior Art Database: 2005-Feb-06

Publishing Venue

IBM

Related People

Authors:
Bassous, E Hu, GJ Osburn, CM [+details]

Abstract

This publication relates to an improved fabrication process wherein P and N/+/ polycrystalline silicon (poly-Si) gates are fabricated on the same structure using the same number of masks as single-polarity poly-Si devices.