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Two Stage Process for Plasma Etching Cermet Films

IP.com Disclosure Number: IPCOM000045039D
Original Publication Date: 1983-Jan-01
Included in the Prior Art Database: 2005-Feb-06

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Diamond, LP Koehler, D Nair, KK Veeraraghavan, VG [+details]


It is known that cermet (CrSiO) films on ceramic substrates may be etched by a plasma etch process using a pre-mixed carbon tetrafluoride and oxygen gas mixture. The process generally requires 30 minutes of plasma etch time for the removal of up to 2,000 A of cermet film. As seen in the chart, there is no significant etching of the cermet accomplished until after the temperature of the etch chamber reaches 180 degrees C. This temperature is reached approximately 15 minutes after the beginning of the etch cycle. In effect, plasma etching of the cermet can be considered as a two-step process consisting of a preheating stage and an etching stage of the cermet film.