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Buried Contact Depletion Device Process

IP.com Disclosure Number: IPCOM000045078D
Original Publication Date: 1983-Jan-01
Included in the Prior Art Database: 2005-Feb-06

Publishing Venue

IBM

Related People

Authors:
Dockerty, RC [+details]

Abstract

A recessed oxide isolated enhancement/depletion MOSFET device is described. The process eliminates possible contamination of the gate silicon dioxide dielectric by the resist layer in the depletion device.