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Redundancy with Switching Transistors Disclosure Number: IPCOM000045091D
Original Publication Date: 1983-Jan-01
Included in the Prior Art Database: 2005-Feb-06

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Malaviya, SD [+details]


The redundancy technique is based upon the availability of a transistor which can be electrically pulsed during the wafer test to create a permanent short between the emitter and the collector, e.g. by outdiffusion of a specially implanted layer of phosphorus near the base. The base to collector and base to emitter junction remains unimpaired by the pulsing.