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By decoupling the vertical and lateral etching during the production of a lift-off mask, the required spacing between adjacent metal lines is reduced to 1 to 2 Mum.
English (United States)
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Lift Off Process for Producing a Dense Metallization Pattern
By decoupling the vertical and lateral etching during the production of a lift-
off mask, the required spacing between adjacent metal lines is reduced to 1 to 2
A first resist layer 2, a lift-off barrier 3, consisting of materials, such as SiO(2),
Si(3)N(4) or glass resin, and a second resist layer 4 are consecutively deposited
on substrate 1. The desired pattern is transferred to resist layer 4 which serves
as an etch mask when lift-off barrier 3 is structured by RIE (reactive ion etching)
in a CF atmosphere. Lift off barrier 3 serves as an etch mask during the RIE of
resist layer 2 in an 0(2) atmosphere at a pressure of about 2 m Torr. This
process step also causes resist layer 2 to be removed. Fig. 1 is a schematic
cross-sectional view of the structure existing at that stage, with opening 5 having
vertical walls without any overhang.
In another RIE step, which is also implemented in an 0(2) atmosphere but at
a pressure of about 100 m Torr, opening 5 is reproducibly laterally expanded by
200 to 300 nm. The enlarged opening 6 has overhanging walls, as shown in Fig. 2. If cleaning of substrate 1 is advisable, the RIE step, used to vertically etch
resist layer 2, is repeated. On the lift-off mask in Fig. 2, a metal layer 7 is blanket
deposited (Fig. 3). Finally, resist layer 2 and with it overlying etch barrier 3 and
overlying metal layer 7 are lifted off.