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Browse Prior Art Database

Quiteron Process Steps

IP.com Disclosure Number: IPCOM000045148D
Original Publication Date: 1983-Feb-01
Included in the Prior Art Database: 2005-Feb-06

Publishing Venue

IBM

Related People

Authors:
Drake, RE Faris, SM Greiner, JH Raider, SI Warnecke, AJ [+details]

Abstract

A cryogenic, three-terminal inverting switch having transistor like properties can be fabricated, and is termed a QUITERON. It is comprised of three superconducting layers separated by two insulating barriers, and has the structure S(1) -I(1) -S(2) -I(2) -S(3), where S(1), S(2) and S(3) are thin superconducting films having superconducting band gaps D(1), D(2), and D(3)4. I(1) and I(2) are insulating barriers. Device operation depends upon the proper choice of parameters, and is achieved by drastically changing D(2), driving it to zero by the injection of excess quasi particles. In order to make this device, a high yield LSI fabrication process is described in which breakable bridges are used to provide selective anodization.