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Controllable Method of Etching Openings into SiO(2) with a 45 Degree Sidewall Angle

IP.com Disclosure Number: IPCOM000045205D
Original Publication Date: 1983-Feb-01
Included in the Prior Art Database: 2005-Feb-06

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Feng, BC Gati, GS Standley, CL Wilbarg, RR [+details]


Sloped via holes (45 degrees-50 degrees sidewalls) are etched in SiO(2) with a standard isotropic etch by depositing a thin blanket layer of plasma deposited oxide on the SiO(2) prior to etching.