Reliable Passivation of Shallow Emitters as Well as Nitride Defined Schottky Diodes
Original Publication Date: 1983-Feb-01
Included in the Prior Art Database: 2005-Feb-06
A method is disclosed for simultaneously ensuring good passivation protection of nitride-defined Schottky diodes as well as shallow emitters. The proposal prevents two independent problems of long-term/ short term leakage of Schottky diodes and/or emitter base junctions.