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Reliable Passivation of Shallow Emitters as Well as Nitride Defined Schottky Diodes

IP.com Disclosure Number: IPCOM000045214D
Original Publication Date: 1983-Feb-01
Included in the Prior Art Database: 2005-Feb-06

Publishing Venue

IBM

Related People

Authors:
Antipov, I Jambotkar, CG [+details]

Abstract

A method is disclosed for simultaneously ensuring good passivation protection of nitride-defined Schottky diodes as well as shallow emitters. The proposal prevents two independent problems of long-term/ short term leakage of Schottky diodes and/or emitter base junctions.