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Mid Development Photoresist Protection Disclosure Number: IPCOM000045353D
Original Publication Date: 1983-Mar-01
Included in the Prior Art Database: 2005-Feb-06

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Brown, KH Castellani, EE Lee, YH Yeh, JT [+details]


Protecting critical areas of an integrated circuit, by adding a thin film of protective metal at an intermediate stage of photoresist development, provides improved line-width control and other beneficial effects by eliminating the effects of very high etch rates under O(2) plasma.