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Semiconductor Disk Memory Structure Disclosure Number: IPCOM000045363D
Original Publication Date: 1983-Mar-01
Included in the Prior Art Database: 2005-Feb-06

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DiMaria, DJ Falcony, C Lai, SK [+details]


In S. Iwamura et al., IEEE Trans. Elec. Dev. ED 28, 854 (1981), it was proposed to use the memory properties of metal-silicon nitride-silicon dioxide-semiconductor structures (MNOS) in a rotating disk memory.