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Bipolar Dynamic Random Access Memory Cell

IP.com Disclosure Number: IPCOM000045599D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Chesebro, DG El-Kareh, B Kenney, WI Lasky, JB [+details]

Abstract

A bipolar dynamic random-access memory cell having interconnected PNP and NPN transistors is fully isolated by a dieiectric medium and cludes an enhanced storage capacitor. A cell of this type is described in U.S. Patent 4,309,716.