Browse Prior Art Database

Bipolar One Device Random Access Memory Cell

IP.com Disclosure Number: IPCOM000045600D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
El-Kareh, B Kinney, WI Lasky, JB [+details]

Abstract

A bipolar dynamic random-access memory cell having one transistor and a serially connected storage capacitor is fully isolated by a dielectric medium so as to provide enhanced storage capacitance and increased immunity to radiation induced errors. A bipolar one-device cell is described in U.S. Patent 3,876,992.