Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
A method is described in which the sidewall width can be increased for the lateral PNP device independently of the vertical NPN device. First, a cross-sectional view of the vertical NPN device is show in Fig. 1, wherein the substrate 10 has extrinsic base region 11, intrinsic base region 12 and emitter region 13 therein. A P doped polycrystalline silicon layer 14 contacts base region 12. A silicon dioxide region 15 covers layer 14, and sidewall silicon dioxide layer 16 insulates the side edge of layer 14.