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DC Sputter Clean Terminal Metallurgy Process Disclosure Number: IPCOM000045814D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07

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Jaspal, JS Roush, WB [+details]


The integrated circuit structure l0 shown in the Fig. 1 details only the top layers of metallurgy layer 12, such as aluminum/copper, an insulator layer 14, such as Flass or silicon dioxide, and opening 15 through layer 14 to layer 12. The opening 15 is one of many such openings which will contain the surface contact metallurgy for the integrated circuit 10. It is critical that the surface contact metallurgy make the best possible physical and electrical contact to the metallurgy layer 12.