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Forming Wide Trench Dielectric Isolation

IP.com Disclosure Number: IPCOM000045820D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07

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Tsang, PJ [+details]


This is a proposal for a maskless, self aligned method of forming a trench dielectric isolation where both the deep narrow trenches and the shallow wide trenches are filled and planarized at the same time. In summary, the proposed method provides that hardened resist plugs are first formed in the dielectric filled trenches, and then are used to facilitate the dielectric planarization.