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Browse Prior Art Database

Method for forming N+ - P+ Tunnel Junctions

IP.com Disclosure Number: IPCOM000045824D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Campbell, DR Malaviya, SD. [+details]

Abstract

Tunnel diodes are useful for making high speed random-access memories and logic, specially if they can be integrated with high speed silicon NPN bipolar technologies. The process described is particularly suited for such applications because of its compatibility with the conventional NPN bipolar process and negligible additional heat cycles.