Method of Fabricate Sub-Micron LDD FET
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07
Lightly doped drain field-effect transistor (LDD FET) Srtuctures require controlled doping of the N- regions. A method for producing a sub-micron LDD FET structure is described which incorporates a technique for obtaining good control of the N- region.