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Method of Fabricate Sub-Micron LDD FET

IP.com Disclosure Number: IPCOM000045826D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Shepard, JF [+details]

Abstract

Lightly doped drain field-effect transistor (LDD FET) Srtuctures require controlled doping of the N- regions. A method for producing a sub-micron LDD FET structure is described which incorporates a technique for obtaining good control of the N- region.