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Method for Measuring Doping Profiles

IP.com Disclosure Number: IPCOM000045831D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Kerr, DR [+details]

Abstract

A critical parameter in the process control and development of bipolar transistors is the base doping profile. Disclosed here are two simple methods of fabricating diodes which can give the profile from C-V data.