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Method for Measuring Doping Profiles Disclosure Number: IPCOM000045831D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07

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Kerr, DR [+details]


A critical parameter in the process control and development of bipolar transistors is the base doping profile. Disclosed here are two simple methods of fabricating diodes which can give the profile from C-V data.