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Electrostatic Discharge Protection for Chip I/O Resistors

IP.com Disclosure Number: IPCOM000045884D
Original Publication Date: 1983-Apr-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Yu, CC [+details]

Abstract

In a bipolar input circuit, a base diffusion region C is added to form an additional electrostatic discharge (ESD) diode to protect the p-resistor R. The subcollector is extended to the region below the added base diffusion. Since point C is closer to the input than point A, the ESD current from the input to ground (subcollector) will mostly go through the diode C. Therefore, the p-resistor R between A and B is protected from this type of ESD damage.