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USE OF COMPOSITE SILICON-RICH SiO/2/ AND SiO/2/ LAYERS OR OFF-STOICHIO- METRIC CVD SiO/2/ LAYERS FOR IMPROVEMENT OF POLY l TO POLY 2 DIELECTRIC

IP.com Disclosure Number: IPCOM000045953D
Original Publication Date: 1983-May-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
DiMaria, DJ Lai, SK [+details]

Abstract

Use of Si-rich SiO/2/ (13% excess atomic Si) buffer layers or off-- stoichiometric CVD SiO/2/ (1-13% atomic Si) provides improvement in breakdown properties of dielectric material. A problem in the double polysilicon gate technology is the breakdown in the SiO/2/ layer between the two polysilicon layers. The problem is enhanced as thinner oxide layers are used when devices are scaled to smaller dimensions.