USE OF COMPOSITE SILICON-RICH SiO/2/ AND SiO/2/ LAYERS OR OFF-STOICHIO- METRIC CVD SiO/2/ LAYERS FOR IMPROVEMENT OF POLY l TO POLY 2 DIELECTRIC
Original Publication Date: 1983-May-01
Included in the Prior Art Database: 2005-Feb-07
Use of Si-rich SiO/2/ (13% excess atomic Si) buffer layers or off-- stoichiometric CVD SiO/2/ (1-13% atomic Si) provides improvement in breakdown properties of dielectric material. A problem in the double polysilicon gate technology is the breakdown in the SiO/2/ layer between the two polysilicon layers. The problem is enhanced as thinner oxide layers are used when devices are scaled to smaller dimensions.