Browse Prior Art Database

Hydrogen Sensor

IP.com Disclosure Number: IPCOM000045955D
Original Publication Date: 1983-May-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Weinberg, ZA [+details]

Abstract

The presence of hydrogen may be sensed using a silicon Metal Oxide Semiconductor Field Effect Transistor (MOSFET) where the silicon is oriented in the OlllJ crystallographic plane direction with respect to the gate electrode. The presence of hydrogen reduces the barrier energy between silicon OlllJ and the gate insulator by about 0.5 electron volts. The gate electrode may be of Pd for which the barrier energy increases by the presence of hydrogen. The combined charge due to hydrogen would be maximized by using silicon OlllJ.