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A method is described for controlling the edge angle in a polysilicon layer at 25 + 10Œ, wherein a borosilicate glass layer is used as an auxiliary layer in a photolithographic process.
English (United States)
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Method of Controlling Edge Angles in a Polysilicon Layer
A method is described for controlling the edge angle in a polysilicon layer at
25 + 10OE, wherein a borosilicate glass layer is used as an auxiliary layer in a
On a silicon substrate, a silicon dioxide layer is grown on which a silicon
nitride layer is deposited. A polysilicon field shield is deposited on the nitride
layer and boron-doped in an open diffusion. The borosilicate glass layer thus
formed on the polysilicon field shield is used as an auxiliary layer in the
subsequent photolithographic process. As the etch rate of the borosilicate glass
layer is much higher than that of polysilicon, simultaneous etching of both layers
through a photoresist mask at a constant ratio of the etch rates inevitably leads to
constant edge angles. The relation applicable is tg etch rate/borosilicate glass/
: etch rate/polysilicon/.
This method permits edge angles of 25 + 10OE, whereas when a polysilicon
layer is etched without a borosilicate glass layer, steeper angles of the order of
60 to 70OE are obtained.
The method is suitable for all boron-doped polysilicon processes.