Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Nucleation Treatment for Oxygen Precipitation in Silicon Wafers

IP.com Disclosure Number: IPCOM000046209D
Original Publication Date: 1983-Jun-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Das, G Varano, MF [+details]

Abstract

Oxygen supersaturated silicon wafers with 23-33 ppm of oxygen are usually susceptible to precipitation upon heat treatments required for device fabrication. This precipitation achieved in a controlled manner is desirable in a device line for high Leakage Limited Yield (LLY). Depending on the variations in crystal growth conditions, some wafers in this concentration range, however, can be resistant to precipitation and, thus, lose valuable gettering properties.