Browse Prior Art Database

Polysilicon Base/Emitter Contact Process

IP.com Disclosure Number: IPCOM000046219D
Original Publication Date: 1983-Jun-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Barbee, SG Gaind, AK [+details]

Abstract

The above drawings illustrate the processing stages utilizing oxidized polysilicon as the dielectric separating an emitter contact metal interconnection and doped polysilicon base contact interconnection.