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An organic etch mask with a vertical profile, which serves to dry etch aluminum, is produced in a trilayer process. The etch mask is highly resistant to chlorine-containing plasmas.
English (United States)
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Method of Producing Thin-Film Patterns
An organic etch mask with a vertical profile, which serves to dry etch
aluminum, is produced in a trilayer process. The etch mask is highly resistant to
Fig. 1A shows a substrate 1 which forms part of a chip. An aluminum layer 2
with a thickness of about 1 to 2 mm is vapor deposited onto this substrate.
Subsequently, a layer 3 of polyimide or polytriethynyl benzene with a thickness of
about 1 to 2 mm is spun on to layer 3 and cured at 400OEC for 1 hour. This is
followed by a plasma deposited SiO2 layer 4 with a thickness of 0.1 mm. A
photoresist layer 5 with a thickness of about 0.5 to 1.0 mm is spun onto layer 4,
exposed and developed. Using photoresist mask 5 (Fig. lB), layers 4, 3, 2 are
reactively ion etched under the following conditions:
SiO2 layer 4: with CF4 gas flow rate: 30 cm3/min. pressure: 40
mbar energy density: 0.2 W/cm2
polyimide layer 3: with O2 gas flow rate: l00 cm3/min. pressure: 2.5
to 3.0 mbar energy density: 0.3 W/cm2
aluminium layer 2: with C12/Ar gas flow rate: 20 cm3/min. pressure:
10 mbar energy density: 0.2 W/cu2
The organic layer 3 or 5 is stripped in an O2 plasma. By means of the
method described, an Al conductor structure (Fig. 1C) with a vertical profile is
The method yields vertical mask profiles with little undercutting. The trilayer
structure including the thick polyimide layer permits planarizing the surface
topology of the wafer. The thin topmost pho...