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Metal Silicide Formed by Laser Irradiation of Silicon Chip in Plating Solution

IP.com Disclosure Number: IPCOM000046256D
Original Publication Date: 1983-Jun-01
Included in the Prior Art Database: 2005-Feb-07

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Kiang, YC Moulic, JR Zahavi, J [+details]


A solution containing the ion of a metal, such as palladium, is placed in contact with a silicon wafer and the wafer surface is radiated with a laser beam. A metal silicide is formed where the beam strikes the surface.