Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Metal Silicide Formed by Laser Irradiation of Silicon Chip in Plating Solution

IP.com Disclosure Number: IPCOM000046256D
Original Publication Date: 1983-Jun-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Kiang, YC Moulic, JR Zahavi, J [+details]

Abstract

A solution containing the ion of a metal, such as palladium, is placed in contact with a silicon wafer and the wafer surface is radiated with a laser beam. A metal silicide is formed where the beam strikes the surface.