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Bird's Beak-Free Recessed Oxide Isolation by O2 Ion Implantation

IP.com Disclosure Number: IPCOM000046398D
Original Publication Date: 1983-Jul-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Pan, PH Tsang, PJ [+details]

Abstract

One of the major problems of the recessed oxide isolation (ROI) formed by the conventional localized oxidation method is the existence of the so-called "bird's beak" which reduces the area on a semiconductor wafer available for device construction. To circumvent the problem, a procedure which utilizes oxygen (O2) ion implantation to form the ROI is used. Since no oxygen diffusion is involved in the ROI growth, the problem of O2 diffusion along the ROI silicon nitride mask/silicon substrate interface is avoided, and the ROI thus formed will be substantially bird's beak-free.