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Browse Prior Art Database

Process for Making Sidewall Resistors With Single Crystal Contacts

IP.com Disclosure Number: IPCOM000046399D
Original Publication Date: 1983-Jul-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Bhatia, HS Hamel, HC Valsamakis, EA [+details]

Abstract

Polysilicon high value resistors are made using a reactive ion etch (RIE)-sidewall technique that provides for single crystal or polycrystalline contact to the sidewall resistors.