The following operators can be used to better focus your queries.
( ) , AND, OR, NOT, W/#
? single char wildcard, not at start
* multi char wildcard, not at start
(Cat? OR feline) AND NOT dog?
Cat? W/5 behavior
(Cat? OR feline) AND traits
Cat AND charact*
This guide provides a more detailed description of the syntax that is supported along with examples.
This search box also supports the look-up of an IP.com Digital Signature (also referred to as Fingerprint); enter the 72-, 48-, or 32-character code to retrieve details of the associated file or submission.
Concept Search - What can I type?
For a concept search, you can enter phrases, sentences, or full paragraphs in English. For example, copy and paste the abstract of a patent application or paragraphs from an article.
Concept search eliminates the need for complex Boolean syntax to inform retrieval. Our Semantic Gist engine uses advanced cognitive semantic analysis to extract the meaning of data. This reduces the chances of missing valuable information, that may result from traditional keyword searching.
Polysilicon high value resistors are made using a reactive ion etch (RIE)-sidewall technique that provides for single crystal or polycrystalline contact to the sidewall resistors.
English (United States)
This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately
70% of the total text.
Page 1 of 2
Process for Making Sidewall Resistors With Single Crystal Contacts
Polysilicon high value resistors are made using a reactive ion etch (RIE)-
sidewall technique that provides for single crystal or polycrystalline contact to the
Starting with the structure of Fig. 1, (1) form insulator 2
layer of SiO2 (4000), and (2) etch rectangular windows in insulator 2
using a mask. This typically would be a minimum line width etch. (3) Deposit 3000 doped poly and blanket RIE to form sidewalls.
These sidewall rails (cross-hatched in Fig. 2) are the body of the
resistor. In this implementation, the regions where the rails
contact the single crystal silicon form the contacts to the resistor.
The single crystal contact regions could have been previously doped
by diffusion or ion implantation, or could be implanted later.
Typically, this region is of low sheet resistance. See Fig. 2. (4)
Thermally oxidize the structure (500). (5) Etch contact holes to the
single crystal regions and make conventional contacts, as shown in
Alternatively, contact can be made to the sidewall resistors via a
(l) Oxidize the substrate of Fig. 4 (500) followed by
appropriate CVD (chemical vapor deposited) oxide (3000-5000 ). (2)
Deposit 2000-4000 of P doped poly. (3) Deposit CVD oxide 500-1000.
(This oxide is for photoresist adhesion. It is not needed if good
resist-poly adhesion is obtained.) (4) Using a mask, etch through
the layers to produce poly pad...