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Ion Implantation Process Preventing Temperature-Resistant Lattice Defects

IP.com Disclosure Number: IPCOM000046427D
Original Publication Date: 1983-Jul-01
Included in the Prior Art Database: 2005-Feb-07

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Brack, K Hagmann, D Schmitt, A [+details]


The formation of temperature-resistant lattice defects, caused by implanting arsenic ions into silicon substrates, is avoided by observing predetermined substrate temperatures.