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The formation of temperature-resistant lattice defects, caused by implanting arsenic ions into silicon substrates, is avoided by observing predetermined substrate temperatures.
English (United States)
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Ion Implantation Process Preventing Temperature-Resistant Lattice Defects
The formation of temperature-resistant lattice defects, caused by implanting
arsenic ions into silicon substrates, is avoided by observing predetermined
Arsenic ions, implanted into silicon substrates through a 22.5 nm thick screen
oxide at a dose of about 5.1016 ions cm-2 and an energy of about 50 keV, cause
lattice defects. These defects are eliminated by annealing if, during ion
implantation, the substrate temperature is set to a value outside the range of
about 60 to about 200C.
It is assumed that within this range the generated defects diffuse and
coalesce to an agglomeration of defects which are temperature-resistant,
whereas at a substrate temperature of less than about 60C there is no diffusion
of defects and at temperatures above about 200C there is no stable
agglomeration of defects.