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CVD Growth of Silicon Using Higher-Order Silanes

IP.com Disclosure Number: IPCOM000046537D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Green, DC Plecenik, RM Scott, BA Tsui, RK [+details]

Abstract

In the growth of epitaxial silicon using chemical vapor deposition (CVD), reduced growth temperatures and/or higher growth rates will minimize autodoping, interface variations, and the resulting degradation of device performance. Higher growth rates and lower temperature processing can be achieved using higher-order silane source gases, such as disilane Si2H6 . Fig. 1 shows a horizontal, inductively heated, air-cooled, CVD quartz reactor 8 which is conventionally used for the deposition of epitaxial and polycrystalline silicon from monosilane (SiH4) in a hydrogen carrier gas. Typically, SiH4 diluted to 0.01-0.1 vol% in H2 is passed over the Si substrates 10 located on susceptor 12 at total flows f=1-10 P/min and pressure p=1 atm. An RF coil 14 surrounds quartz tube 8.