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Refresh And/Or Storage Mode Operation of Direct-View EL Storage CRT

IP.com Disclosure Number: IPCOM000046554D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Sahni, O [+details]

Abstract

The present publication provides a refreshed write-through capability for an electroluminescent (EL) CRT to allow for cursor, etc., operation by electron-beam charge selection. The EL storage faceplate 1 consists of a ZnS:Mn active layer 2, sandwiched between two insulating films 3 (e.g., BaTi03). The AC coupled structure is driven by an AC voltage applied between a transparent conducting film 4 (viewing side) and a thin Al film 6 (on the E-beam side). The electron beam 8 is used to switch this active face plate 1 between its bistable states. The refreshed write-through mode requires the E-beam to display information without perturbing visibly the bistable off state of the store structure on which it is being traversed. Cathodoluminescence by itself is too weak in the EL faceplate structure to provide sufficient luminosity.