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Maskless Method for Forming Josephson Junctions

IP.com Disclosure Number: IPCOM000046740D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Pollak, RA Reuter, W [+details]

Abstract

Josephson junctions may be formed without masking steps by ion milling individual Josephson junction devices from a large area multilayer structure using a small direct writing ion beam. It is desirable to be able to fabricate large area superconductor/ insulator/superconductor Josephson junction structures in one vacuum operation and subsequently to etch smaller area junctions from this blanket structure. Here, we describe a maskless method to accomplish this. A large area Josephson junction structure 10 (Fig. 1) comprises a substrate 12 carrying a base electrode layer 14, a tunnel barrier layer 16 and a counter electrode layer 18.