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Merged Nonvolatile Random-Access Memory Cell

IP.com Disclosure Number: IPCOM000046890D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue


Related People

Cranford, HC Hoffman, CR [+details]


A major problem with increasing density of single silicon chip nonvolatile random-access memories is that the drive to higher density circuits increases the time required to alter the state of the nonvolatile element when compared to acceptable read/write times. Secondly, the number of store and erase cycles becomes limited. A dual-cell nonvolatile random-access memory approach has been used heretofore in which a fast read/write volatile cell is combined with a nonvolatile cell. Transfer from the volatile cell to the nonvolatile cell is made only when power is removed in this approach. It effectively puts two cells at each memory location in a matrix and thereby results in a decrease in the achievable density as compared to densities of a volatile random-access memory.