Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Merged Nonvolatile Random-Access Memory Cell

IP.com Disclosure Number: IPCOM000046890D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Cranford, HC Hoffman, CR [+details]

Abstract

A major problem with increasing density of single silicon chip nonvolatile random-access memories is that the drive to higher density circuits increases the time required to alter the state of the nonvolatile element when compared to acceptable read/write times. Secondly, the number of store and erase cycles becomes limited. A dual-cell nonvolatile random-access memory approach has been used heretofore in which a fast read/write volatile cell is combined with a nonvolatile cell. Transfer from the volatile cell to the nonvolatile cell is made only when power is removed in this approach. It effectively puts two cells at each memory location in a matrix and thereby results in a decrease in the achievable density as compared to densities of a volatile random-access memory.