Browse Prior Art Database

New Resist Combination for Forming a Two-Layer Photoresist Lift-Off Mask

IP.com Disclosure Number: IPCOM000046928D
Original Publication Date: 1983-Aug-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Horng, CT Lane, LH [+details]

Abstract

A new two-layer resist combination can be used to form lift-off resist structures for fabricating high resolution metallization patterns. This dual-layer photoresist lift-off structure is formed by using Macdermid PR-75 (or PR-74) photoresist as a bottom resist layer. The top resist layer is a Shipley AZ-2400 photoresist. Both resists are commercially available positive-type photoresists. These two resists when applied sequentially do not have an intermixing problem. The processes for coating, exposing and developing this dual-layer resist to form lift-off structure are fairly simple as compared to that of the other two-layer resist systems. The process steps for forming the lift-off masks using this new resist combination are described in the following: 1. Spin coat HMDS (Hexamethyldisilazane) adhesion promoter. 2.