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Wavelength-Stabilized Semiconductor Laser Disclosure Number: IPCOM000047132D
Original Publication Date: 1983-Sep-01
Included in the Prior Art Database: 2005-Feb-07

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Chambliss, DD Johnson, M [+details]


An injection laser structure is described having a lasing junction region and a non-lasing junction region fabricated from different bandgap materials such that index of refraction variations with temperature in the non-lasing region exactly cancel temperature-induced wavelength variations in the lasing region, thereby producing a laser with a wavelength nearly independent of temperature. Residual variations may be removed by modulating the current in the non-lasing region. The narrow linewidth and demonstrated long coherence length of semiconductor lasers suggest their use in interferometric applications, such as metrology, and in heterodyne communications systems. Progress in this area has been hampered up to now by the poor temperature stability of the lasing wavelength.