Dismiss
The InnovationQ application will be updated on Sunday, May 31st from 10am-noon ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Deposition of Phosphosilicate Glass Layers Having Uniform Thickness and Dopant Concentration Onto Semiconductor Substrates

IP.com Disclosure Number: IPCOM000047206D
Original Publication Date: 1983-Oct-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Hottin, C LeGras, JP Plougonven, C [+details]

Abstract

Typical open-tube diffusion processes involve gas reactions in the tube to form a doped glass which deposits on the wafers. Gas reactions are: O2 + BBr3 for boron-doped glass, O2 + POCl3 for phosphorous-doped glass. The reacting gases are carried into the tube via a carrier gas (typically, argon). A typical diffusion process sequence involves three phases: I Furnace recovery and temperature equilibrium with: Ar carrier gas + O2 No source (BBr3 or POCl3) II Doped glass deposition: Ar carrier gas + O2 Source (BBr3 or POCl3) III Drive in: Ar carrier gas + O2 It is assumed that the small oxygen flow rate during phase I is enough to form a small nonuniform layer of oxide onto the wafers which, in turn, results in non-uniform thickness and doping of the doped glass layer.