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Chemically Enhanced Laser Etching

IP.com Disclosure Number: IPCOM000047234D
Original Publication Date: 1983-Oct-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Anderson, RB Chesnutt, RB Mahanna, JR [+details]

Abstract

The widespread use of laser technology in material removal has been delayed due to the problems encountered with substrate redeposition. This phenomenon causes surface roughness, lack of etch depth control and poor reproducibility of microgeometries. To prevent redeposition, the laser beam is directed through a substance and onto the substrate to be etched. This absorbing substance could be in a liquid or gaseous form and must have an affinity with the substrate material for getting the particles. The vessel which contains the absorbing substance and substrate should be constructed of a material transparent to the wavelength of the laser being used. Upon irradiation of the substrate surface by the laser, atoms or groups of atoms are vaporized.