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Tdb 11-83 P.2688-2689 Resist Process Mask Disclosure Number: IPCOM000047326D
Original Publication Date: 1983-Nov-01
Included in the Prior Art Database: 2005-Feb-07

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Gillespie, SJ [+details]


This article describes a technique for making a single layer resist mask which is insensitive to the topography of the underlying material. It uses two resist layers which have different etching characteristics. After the top layer is exposed and developed, the bottom layer is totally etched away, leaving the top imaging layer directly on the surface of the substrate. While double-layer resists have been used before to fabricate undercut profiles for lift-off processes, they have not been used in a process which requires that the lower resist layer be completely removed after imaging to make a dimensionally controlled mask in contact with the substrate. Figs. 1 and 2 illustrate two important steps of the described technique. In Fig.