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Wafer Map Organization for Counterbalancing Auto-Doping Effects in Semiconductor Processing Disclosure Number: IPCOM000047362D
Original Publication Date: 1983-Nov-01
Included in the Prior Art Database: 2005-Feb-07

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Related People

Mollier, P Nuez, JP [+details]


The proposal relates to an arrangement of the chips on a wafer during the manufacturing process to reduce the percentage of subcollector area to a value compatible with the process requirement to counterbalance auto-doping effects. Some processing steps in semiconductor manufacturing are influenced by the amount of impurities contained in the wafers. This auto-doping effect is particularly noticeable when hot process steps involving light doping doses are applied to materials containing highly doped areas. That is the case for silicon epitaxial growth on wafers containing exposed areas of highly doped subcollector beds and isolation walls.