Browse Prior Art Database

Cathode Design for Reactive Ion Etching Apparatus

IP.com Disclosure Number: IPCOM000047379D
Original Publication Date: 1983-Nov-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Fischer, G Stenberg, R [+details]

Abstract

This article describes a new design for a cathode assembly in a reactive ion etching (RIE) apparatus which allows a large number of wafers to be etched at a uniform rate. Basically, the apparatus consists of a 28" diameter aluminum water-cooled cathode 1. An unbonded quartz plate 3 is used to support the silicon wafers on the cathode device. To prevent the atmosphere from entering the chamber, an 0-ring is located at position 5. To electrically isolate the cathode from the chamber, insulator ring 7 and insulators 9 are used. The base plate 11 is an integral part of the chamber, and is mechanically bolted to the cathode 1 through insulator 9. To lower the capacitance from the base plate 11, the base plate area was reduced and a shield plate 13 was attached.