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Memory Cell With Internal Soliton Generation

IP.com Disclosure Number: IPCOM000047494D
Original Publication Date: 1983-Nov-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Rajeevakumar, T Stuck, GJ [+details]

Abstract

Solitons generated internally within a memory cell, as a result of applied DC input currents, are effective to provide read/write signals for the cell. The device is shown schematically in Fig. 1. Fig. 1 is a schematic top view of Josephson transmission lines; the groundplane is the bottom electrode of the transmission lines; the shaded areas are isolation resistors (N/N33 L)in the top electrode of the junctions, and inductors are connected between the top electrode and ground in sections 1, 2, 3, and 4. Each of these inductors has LI0D0/2. Sections 2, 3, 5, and 6 have a length approximately gj; sections 1 and 4 are about 3gj in length. Four control lines are magnetically coupled as shown.