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SCR Cross-Coupled Memory Cell

IP.com Disclosure Number: IPCOM000047532D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Hulvey, MD Kim, IW Selfridge, TA [+details]

Abstract

The current hogging problem in silicon-controlled rectifier (SCR) cross-coupled memory cells is minimized by minimizing the negative resistance characteristic in the cells. The negative resistance characteristic may be minimized by (1) reducing the resistance in series with the Schottky barrier diodes of the cell, indicated in Fig. 1 as resistors R1 and R2, (2) reducing the current I through the collector of the PNP transistors of the cells, and (3) by increasing the base-to-emitter voltage of the PNP transistors. The electrical circuit of the SCR cell is shown in Fig. 1. The circuit includes first and second cross-coupled bipolar NPN transistors T1 and T2, each having a pair of dual emitters, first and second PNP transistors T3 and T4, and first and second Schottky barrier diodes D1 and D2.