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High-Low Epitaxial Process Under Reduced Pressures

IP.com Disclosure Number: IPCOM000047565D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Srinivasan, GR [+details]

Abstract

A high-low epitaxial process has allowed the reduction of epitaxial temperatures for silicon depositions. However, at decreased deposition temperatures, a certain amount of autodoping still remains although it is considerably reduced by the process. The reduced-pressure epitaxial process helps in reducing this autodoping problem especially for N type dopants in silicon. The typical reduced-pressure epitaxial process uses a SiH2Cl2 epitaxial growth at 1080ŒC. The epitaxial quality of layers grown by this technique remains a problem. The following procedures overcome these problems. After loading the epitaxial reactor with silicon wafers, the reactor is preheated in H2 to heat the silicon wafers at reduced pressures in the range of 0.1 - 0.