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Lead Silicate Glass Isolation Technology

IP.com Disclosure Number: IPCOM000047578D
Original Publication Date: 1983-Dec-01
Included in the Prior Art Database: 2005-Feb-07

Publishing Venue

IBM

Related People

Authors:
Beyer, KD Pliskin, WA [+details]

Abstract

Lead silicate glasses are useful as an isolation material for deep trench isolation of semiconductor integrated circuits. Although many techniques, such as chemical vapor deposition (CVD), sputtering or paint-on coatings, are feasible for the deposition of lead silicate glasses, it is preferred to use the centrifuge sedimentation method. The centrifuge sedimentation of lead silicate glass allows the precise selection of the glass material, which matches the thermal expansion coefficient characteristics of silicon or other semiconductor in which the isolation is to be formed. In particular, the preferred material is lead silicate glass (CORNING 7723*), which has a softening temperature of approximately 770ŒC.